Characterization of Enhanced Schottky-Barrier InGaAs/AlxGa(1-x)As Strained Channel Modulation-Doped Field-Effect Transistors.
Abstract
Enhanced Schottky-barrier In(0.15)Ga(0.85)As/A1xGa(1-x)As pseudomorphic modulation-doped field-effect transistors (MODFETs) were fabricated with 1.2 micron gate-lengths on MBE-grown substrates. The effective gate Schottky-barrier height was enhanced by adding a thin p(+)-GaAs layer beneath the gate. A portion of the n-A1(0.15)Ga(0.85)As barrier layer beneath the p(+)-GaAs surface layer was linearly graded from a mole fraction of 0.15 to 0.30 to further increase the effective Schottky-barrier height. MODFETs of identical dimension and doping density were fabricated without the p(+)-GaAs and/or graded N-A1(x)Ga(1-x)As layers for comparison. The goal was to improve the MODFETs high-frequency performance by reducing the gate leakage current. The effective Schottky-barrier height was shown to increase from 0.9 to 1.6 eV for the p(+)-graded samples. The extrinsic transconductance was as high as 190 mS/mm for the p(+)-grades samples and 311 mS/mm for the graded control samples. The p(+)-graded samples exhibited and f(T) and f(max)of 26 and 54 GHz, respectively, compared to 19 and 28 GHz, respectively, for the graded control samples. The noise figure for the p(+)-graded samples was 1.7 dB at 12 GHz, compared to 1.9 dB for the graded control samples. Overall, the MODFETs with enhanced barriers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1987
- Accession Number
- ADA188820
Entities
People
- James A. Lott
Organizations
- Air Force Institute of Technology