Blue-Green Laser Diode Research Program.
Abstract
This report presents the results of work during the final quarter of ONR Contract No. N00014-85-C-0552 (July 1, 1987 to September 30, 1987) and during a three-month extension of the original twenty-four month program (October 1, 1987 to December 31, 1987). This report concludes with a Summary Report describing the highlights and major accomplishments under this contract during the period October 1, 1985 to December 31, 1987 in the following areas: i. Growth of unintentionally-doped ZnSe epitaxial films by MBE on (100) GaAs substrates in order to fully characterize the material and to understand the effects of varying growth conditions on the resultant film properties; ii. Growth of unintentionally-doped ZnSe on alternate substrates (Ge, Si, Ge with Ge buffer layer, Si with Ge/ZnSe strained-layer superlattice buffer layer) in an attempt to reduce the deleterious effects caused by lattice mismatch between the substrate and the epilayer and/or possible autodoping by contaminants from the substrate which had been suspected to occur when using GaAs substrates; iii. p-doping of ZnSe films on (100) GaAs substrates; iv. Examination of the lasing properties of ZnSe films using electron-beam pumping; and v. Studies of metal contacts on ZnSe for Ohmic contacts and Schottky barriers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1988
- Accession Number
- ADA191980
Entities
People
- C. T. Walker
- H. A. Mar
- J. E. Potts
Organizations
- 3M