Compound Semiconductor Materials, Devices and Circuits

Abstract

This one year research program on compound semiconductor materials growth, devices and circuits has focused on: (a) organometallic vapor phase epitaxy (OMVPE) of GaInP/GaAs and AlInP/GaInP superlattices; (b) enhancement of heterostructure device speed performance via strain layer superlattices and mushroom gates in modulation doped FET's (MODFET's), and inserted tunnel barriers heterojunction bipolar devices (HBT); (c) fabrication and characterization of MODFET devices with gate lengths to 50 nm; (d) self- consistent Monte Carlo transport formulation and its application to small graded heterostructure devices; (e) optical modulation based on the quantum confined Stark effect; and (f) femtosecond spectroscopy of hot carrier processes using the visible Rh6G laser and a new UV BaB2O4 laser. Keywords: Gallium indium phosphide; Gallium arsenide; Aluminum indium phosphide; Field effect transistors; Barium borate.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1988
Accession Number
ADA197640

Entities

People

  • C. L. Tang
  • E. D. Wolf
  • J. P. Krusius
  • J. R. Shealy
  • L. F. Eastman
  • P. J. Tasker

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Beam Lithography
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Laser Diodes
  • Monte Carlo Method
  • Optical Properties
  • Power Electronics
  • Quantum Wells
  • Raman Spectroscopy
  • Repetition Rate
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing