Transport and Junction Physics of Semiconductor-Metal Eutectic Composites
Abstract
An investigation of the transport and junction physics of Si-TaSi2 semiconductor-metal eutectic composites has demonstrated the potential use of this class of materials in highpower switching. Following the development of single-crystal matrix Si-TaSi2 crystals, eutectic diodes utilizing the in situ junctions were fabricated and analyzed using current-voltage, capacitance- voltage, and electron-beam-induced current techniques. Studies demonstrated nearly ideal diode behavior, a Schottky barrier height of 0.62 eV, and a means of measuring the extent of the depletion zones and the carrier concentration of the semiconductor matrix. An analysis based on a comparison of the EBIC- determined carrier concentration with the Hall carrier concentration resulted in a measure of the effect of the depletion zones on composite resistivity. Building on the foundation provided by this analysis, the first eutectic composite transistors were demonstrated. These devices confirmed that current flow can be controlled by pinching off Si channels between TaSi2 rods. Furthermore, testing at high voltages indicated that the eutectic devices are resistant to avalanche breakdown. Devices have been built that block 600 V, three times the value for a conventional planar device in a wafer of the same carrier concentration. Keywords: Solid state switching, Electron beam induced current, Eutectic composites, Depletion zones.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1988
- Accession Number
- ADA198480
Entities
People
- B. Ditchek
- Jon K. Gustafson