Materials Processing Diamond: Etching, Doping by Ion Implantation and Contact Formation
Abstract
We have doped natural diamond with B or P ion implantation at liquid nitrogen temperature. Ions of C were implanted prior to the dopant implants, in order to enhance the vacancy concentration in the diamond, thereby increasing the likelihood that the dopant atoms would occupy substitutional lattice sites, and thus be electrically active. Various post-implantation annealing methods were employed to reduce the residual damage in the crystals. Type IIa diamond crystals were implanted with boron ions with or without prior carbon ion implantation. The samples were kept at liquid nitrogen temperature during both implantation steps. A strong near-edge optical absorption band appeared after implantation, and partially recovered during annealing at 800 C. For the highest B implantation fluence, optical absorption peaks at 2800 to 3000 reciprocal centimeters were observed that were in the same vicinity as the absorption peaks attributed to substitutional boron atoms in natural p-type diamond.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1988
- Accession Number
- ADA202380
Entities
People
- Wei-kan Chu
Organizations
- University of North Carolina at Chapel Hill