The Construction and Study of Improved Al(x)Ga(1-x)As-GaAs Heterostructure Devices

Abstract

This report describes the results and the progress we have made in the study of: (a) Impurity-induced layer disordering (IILD) of thin layer III-V heterostructures and its application to quantum well heterostructure lasers, (2) the fundamental behavior of quantum well heterostructures and the application of IILD to laser devices, and (3) the continuous (cw) room temperature (300 K) laser operation of A1xGa1-xAs-GaAs quantum well heterostructures grown on Silicon. Aluminum gallium arsenide, Gallium arsenides.

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Document Details

Document Type
Technical Report
Publication Date
Jan 03, 1989
Accession Number
ADA204814

Entities

People

  • G. E. Stillman
  • N. Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Growth
  • Crystal Lattices
  • Crystals
  • Electrical Engineering
  • Electron Microscopy
  • Electronics Laboratories
  • Energy Bands
  • Fabrication
  • Heterojunctions
  • Laser Diodes
  • Materials
  • Quantum Efficiency
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing