Strength and Structure of Ga(1-x)In(x)As Alloys
Abstract
The role of isovalent dopants in the high temperature deformation of GaAs has been studied in the temperature range 550 C to 1150 C. Additions of In, Sb, and B increase the high temperature hardness and the critical resolved shear stress for deformation at a given strain rate and result in lowering the dislocation density of as-grown liquid-encapsulated Czochralski GaAs crystals. Phosphorus, because of its minor influence on the lattice strain, provides little enhancement of the yield stress. The results are consistent with a solute hardening model where the solute atom surrounded tetrahedrally by four Ga or As atoms comprise the hardening cluster. Codoping with In and Si is less effective than the isovalent solutes, In, B, and Sb, and produces softening at high temperatures. Transmission electron microscopy provides evidence consistent with the athermal contribution to the friction stress arising from a solid solution hardening effect. Cursory studies on solid solution in II-VI compounds, specifically, Cd1-xMnXTe, demonstrate similar results. The role of dislocation damage in strained layer superlattices has also been modeled. Gallium arsenides, Antimony, Boron indium compounds, Gallium indium arsenides, Cadmium tellurides, Manganese compounds.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 31, 1989
- Accession Number
- ADA205415
Entities
People
- Dennis Ready
- John P. Hirth
- Katherine Faber
Organizations
- Ohio State University