Silicon Oxidation Studies on Thin Film Silicon Oxidation Formation

Abstract

The formation of thin Silicon dioxide 2 films via thermal oxidation on single crystal Si substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin Si02 formation yet exists, but recent studies lead in new directions towards this goal.

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Document Details

Document Type
Technical Report
Publication Date
Mar 14, 1989
Accession Number
ADA206835

Entities

People

  • Eugene A. Irene

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Chemistry
  • Crystals
  • Electronic States
  • Electrons
  • Equations
  • Films
  • Impurities
  • Kinetics
  • Materials Science
  • North Carolina
  • Orientation (Direction)
  • Oxides
  • Physics
  • Security
  • Silicon
  • Thin Films
  • United States

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene