Growth and Characterization of Zinc Sulfide Films by Conversion of Zinc Oxide Films with H2S
Abstract
Zinc sulfide is an IR window material and a transparent semiconductor with a large direct band gap. It also possesses piezoelectric, photoconductive and electroluminescent properties. Thin films of zinc sulfide can be utilized for infrared antireflection coatings, light-emitting diodes (LEDs), electroluminescent (EL) displays, multilayer dielectric filters, optical phase modulation and light guiding in integrated optics. In recent years, there has been a large amount of effort directed at the growth of high quality films of ZnS. Various fabrication techniques have been employed, such as ion beam sputtering, atomic layer epitaxy (ALE), molecular beam epitaxy (MBE), metal organic chemical vapor deposition and spray pyrolysis. Zinc sulfide films were prepared by conversion of zinc oxide films in the presence of hydrogen sulfide. The films which contained both the hexagonal and cubic forms of zinc sulfide were shown to be uniform and gave a measured band gap of 3.65 eV. The electrical resistances of the films prepared were greater than 10 to the 7th ohms.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 30, 1989
- Accession Number
- ADA208727
Entities
People
- Aaron Wold
- J. Baglio
- Kirby Dwight
- P. Wu
- Y-m. Gao
Organizations
- Brown University