Solid State Research
Abstract
Contents: Microwave Bandpass Modulators in Lithium Niobate; Surface-Energy and Temperature Effect on Etched Structures in Compound Semiconductors-Model of the Mass Transport Phenomenon; Kinetics of Mass Transport of Etched Structures in InP Due to Surface-Energy Minimization; A Simple Model of Amplified Spontaneous Emission Spectral Narrowing High-Power, Diffraction-Limited, Narrowband External Cavity Diode Laser; Si-on-Insulator Films Prepared by Zone-Melting Recrystallization with Enhanced Radiative Heating; Selective Plasma Etching of Si from GaAs-on-Si Wafers; Selective-Area Laser Photodeposition of Transparent Conductive SnO2 Films; Electrical Characteristics of Ultrashallow-Junction Diodes Fabricated by Laser Doping; Patterned Excimer-Laser Etching of GaAs Within a Molecular Beam Epitaxy Machine; PBT Amplification at 94 GHz; A 64 X 64-Pixel Back-Illuminated CCD Imager with Low Noise and High Frame Rates; High-Speed Resonant-Tunneling Diodes Made from the Pseudomorphic In(0.53)Ga(0.47) As/A1As System; Superconductive Nb Thin-Film Capacitors with Ta2O5 Dielectric; Deposition of YBa2Cu3Ox Films by Sequential RF Diode Sputtering; and Microwave Surface Resistance of BiSrCaCuO Films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1988
- Accession Number
- ADA209969
Entities
People
- Alan L. McWhorter
Organizations
- Massachusetts Institute of Technology