Studies of High Power Density, Pico-Second Rise-Time Light Activated Semiconductor Switch
Abstract
The carrier dynamics of the diode which is related to its electrical power switching behaviors is investigated in this program. A model is developed where the carrier transport and Maxwell equations are incorporated and self-consistent electrical field profiles, current density and carrier are obtained in the PIN diode. Both low and high level optical excitations as well as low and high applied bias situations can be described by this model. The transient behavior of the diode switch at different optical energy levels is now well understood, while conventional theory for photodiodes at low level excitation and at low bias cannot be applied to cases for high level excitation and high bias. As a circuit element, the rise time of the switch under these circumstances depends on the time the internal field is cancelled out by mobile carriers generated. The predicted input energy dependence and the transmission line impedance dependence of the rise time compare well with experimental results. The model also suggests the experimental configuration for obtaining power in the GW range. Finally, a preliminary investigation is made on the effects of avalanche multiplication on the performance of the diode switch.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1988
- Accession Number
- ADA210549
Entities
People
- Paul Yu
Organizations
- University of California, San Diego