International Workshop on Hydrogen Passivation of Dopants and Defects in III-V Compounds and Their Alloys
Abstract
This Workshop is intended as a small meeting of people active in the field of the interaction of hydrogen with dopants and defects in III-V compounds and their alloys. The main subjects debated in this workshop will be: The practical use of hydrogenation, either by plasma introduction or by proton implantation in the fabrication of III-V devices. The study by electrical and optical methods of the neutralization by hydrogen of dopants in III-V compounds. The correlation between the distribution of hydrogen, its charge state and the dopant neutralization. The presentation of channeling measurements which give a good insight of the atomic location of hydrogen in the crystal lattice is a natural transition to the calculation of microscopic models of the hydrogen complexes, first performed for hydrogen in pure and doped silicon and more recently in doped gallium arsenide.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 04, 1988
- Accession Number
- ADA222927
Entities
People
- G. R. Antell
- Gerhard Pensl
- J. Chevallier
- J. H. Neethling
- N. Caglio
- N. Duhamel
- N. M. Johnson
- N. Pan
- P. Collot
- Stephen Cole
- W. C. Dautremont-smith