Transient Annealing Characterization of Irradiated MOSFETS

Abstract

The electrical response of metal-oxide-silicon (MOS) technologies to incident nuclear (especially photon) radiation is a very complex, time-dependent function. This report reviews the physical processes governing this response and then experimentally examines them with the aid of the TATS-400 (Transient Annealing Test System). MOSFET responses to steady-state and pulsed photon and electron beams are characterized in terms of such parameters as threshold voltage shift and interface and oxide trap densities. The results show good agreement between experiment and theory in terms of the expected trends, however in order to conduct more meaningful tests, devices with much better-known geometries must be procured. Keywords: Transient radiation effects on electronics; Metal-oxide-silicon field effect transistor; Nuclear radiation; Gamma rays; Electrons; Holes; Dose; Dose rate; Annealing; Canada. (rh)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1990
Accession Number
ADA223877

Entities

People

  • K. M. Qureshi
  • Thomas Cousins

Organizations

  • Defence Research and Development Canada

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Classification
  • Diagrams
  • Dose Rate
  • Electronics
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Gamma Rays
  • Ionizing Radiation
  • Linear Accelerators
  • Metal Oxides
  • Nuclear Radiation
  • Radiation Effects
  • Schematic Diagrams
  • Transistors
  • X Rays

Fields of Study

  • Physics

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Microelectronics