Investigation of InP Processing Techniques for Device Applications

Abstract

The emphasis of this research program was strongly oriented towards the overall technology of InP for photonic and other device applications. These investigations reported here include such important and diverse subjects as the use of Rutherford backscattering (RBS) to study the solid phase epitaxial growth of InP after amorphization by heavy implant doses, the formation of a novel insulator in InP for passivation, the metallurgy of the 'traditional' AuGe/Ni/Au contact for n-type InP and an analysis of the annealing of such contacts during the short times involved in RTA, the use of electrochemical profiling techniques to determine non-uniform implant distributions into InP, and the diffusion of the deep Fe trap in semi-insulting InP substrates as a result of standard thermal treatments. Significant progress has been made in all of these areas. (JES)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1990
Accession Number
ADA225090

Entities

People

  • James L. Merz

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electrical Measurement
  • Electronics Industry
  • Electronics Laboratories
  • Engineering
  • Epitaxial Growth
  • Heat Treatment
  • Integrated Circuits
  • Ion Implantation
  • Lasers
  • Low Temperature
  • Materials
  • Materials Science
  • Optical Properties
  • Optoelectronics
  • Power Electronics
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene