Studies of Hetero-Epitaxy of GaAs Films on Si Substrate for Effective Control of Defect Density and Internal Stress
Abstract
During the period April 89-90, we carried out experiments on studies of heteroepitaxial films grown on lattice-mismatched substrates in three main areas: (1) migration-enhanced (or modulated) MBE to promote 2-dimensional growth of heteroepitaxial films, (2) growth on patterned substrates to reduce thermal stress, and (3) study of GaAs/Si laser characteristics, especially polarization dependence and threshold current, to correlate with results from basic material studies in area 1 and 2. Recently we have started exploring new directions for hetero-epitaxy on lattice-mismatched substrates, and have done exploratory work on (4) growth on (111) plane of strained A1InAs/A1As quantum well and (5) GaAs growth on Si/sapphire (SOI) substrate. In this report, we first summarize experimental results on work in groups 1, 2 and 3. This followed by a discussion of our exploratory work which will point the direction for our future research.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1990
- Accession Number
- ADA226144
Entities
People
- Shyh Wang
Organizations
- University of California, Berkeley