Electron Spin Resonance and Radiation Effects in MOS Devices

Abstract

The basic mechanisms were explored of radiation damage in metal/ oxide/silicon (MOS) field effect transistors (MOSFET's) with a combination of electron spin resonance (ESR) and electrical measurements. The major focus has been develop a new and much more sensitive ESR technique called spin dependent recombination (SDR) to study radiation damage in MOSFET's. Keywords: Metal oxide semiconductors; Field effect transistors; Electron spin resonance; Radiation effects.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1990
Accession Number
ADA228651

Entities

People

  • M. A. Jupina
  • Patrick M. Lenahan

Organizations

  • Pennsylvania State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Electrical Measurement
  • Electron Spin Resonance
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • Ionizing Radiation
  • Magnetic Fields
  • Magnetic Resonance
  • Measurement
  • Metal Oxide Semiconductors
  • P-N Junction Diodes
  • P-N Junctions
  • Radiation
  • Resonant Frequency
  • Semiconductors
  • Spin Resonance

Fields of Study

  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics