Random Logic Oxide Screening Methods
Abstract
This report covers the work performed on the Random Logic Oxide Screening Methods study in which techniques were investigated to improve oxide reliability screening methods in CMOS random logic devices. This effort included modeling of time dependent dielectric breakdown in state-of-the-art gate oxides, development of both internal and external screening techniques, and the performance of a screen and accelerated life test to verify predicted screening effects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1990
- Accession Number
- ADA230579
Entities
People
- Douglas N. Krening
Organizations
- Martin Marietta