Laser Processing of Silicon On Sapphire (SOS) for Fabrication of Bipolar Transistors

Abstract

Nanosecond thermal processing using an excimer laser was used in fabrication of NPN bipolar transistors in silicon-on-sapphire (SOS). Functional devices with current gain approaching 100 were obtained. The deleterious effects of diffusion pipes in SOS material were minimized using rapid laser activation of in implanted dopant. Details of the device design fabrication, and test results are included in this report.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1990
Accession Number
ADA233390

Entities

People

  • B. W. Offord
  • K. H. Weiner
  • S. D. Russell

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Chemical Vapor Deposition
  • Chemistry
  • Diffusion
  • Electronics Laboratories
  • Epitaxial Growth
  • Excimer Lasers
  • Fabrication
  • Lasers
  • Materials
  • Npn Transistors
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Transistors
  • Very Large Scale Integration

Fields of Study

  • Materials science
  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy