CIM 10-micrometers Array Development
Abstract
A 480 x 4 element charge imaging matrix (CIM) scanning focal plane has been developed for IR search/track applications in the 8 to 12 micron band. The CIM array consists of 8 rows of 240 elements on 3-mil centers (cross-scan), with an active pixel area of 1.6 x 1.7 mil-sq, and four stages of time-delay- and-integration (TDI). Arrays are fabricated in thinned LWIR HgCdTe and vertically interconnected to underlying custom-designed Si IC processors. A linear (480 x 1) version of the design was also implemented, along with wire-bondable (nonvertically integrated) versions of both arrays for performance analysis and diagnostics. A parallel technology study addressed LWIR CIM performance issues, including detector noise mechanisms, diode leakage current and noise reduction, 1/f noise sources, and the effects of substrate thinning on p-type HgCdTe MIS properties.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 31, 1991
- Accession Number
- ADA236781
Entities
People
- A. B. Richert
- E. J. Esposito
- J. P. Omaggio
- L. A. Wood
- M. J. Ohlson
- R. B. Garner
- R. W. Gooch
Organizations
- Texas Instruments