Deposition of InP-ON-Si Substrates for Monolithic Integration of Advanced Electronics

Abstract

This report describes the development of a technology for the deposition of InP and lattice-matched InGaAs onto Si and GaAs substrates. Such structures are useful for the monolithic integration of high speed optical and electronic devices. The growth technique employed in this program in metalorganic chemical vapor deposition (MOCVD), and GaAs buffer layers are employed to improve the quality of the InP epilayers. Other deflect-reduction techniques studied include the use of strained layers and thermal annealing. Characterization methods include transmission electron microscopy, photoluminescence (PL),PL decay, Hall effect, electrochemical C-V profiling, and deep-level transient spectroscopy. Junction field-effect transistors and PIN photodiodes have been fabricated and characterized on Si, GaAs, and InP substrates, and their performance characteristics compared.

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Document Details

Document Type
Technical Report
Publication Date
Apr 19, 1991
Accession Number
ADA238818

Entities

People

  • Stanley M. Vernon

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystals
  • Diodes
  • Electron Microscopy
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Hall Effect
  • Microscopy
  • Optical Analysis
  • Optical Properties
  • Physical Properties
  • Power Electronics
  • Quantum Efficiency
  • Semiconductors
  • Transistors
  • Transmission Electron Microscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene