European Conference on Molecular Beam Epitaxy and Related Growth Methods (6th) Held in Tampere, Finland on 21-14 April 1991
Abstract
Topics covered during this symposium includes: (1) Local growth of silicon MBE layers; (2) Doping during growth; (3) Electrical characterisation for silicon; (4) Design and performance of multiwafer MBE system used in HEMT production; (5) Indium free mounting technique retrofit to a 2 inch in bonded wafer substrate holder; (6) Structure, properties, and purity of pyrolytic boron nitride crucibles; (7) The temperature dependence of the critical layer thickness in in0.36 Ga0.64 As/GaAs single quantum wells; (8) Large piezoelectric fields; (9) In Situ monitoring of III-V MBE growth processes using laser light scattering; (10) In Situ control of epitaxial growth using reflectance difference; (11) Surface stoichiometry variation in atomic layer molecular beam epitaxy of galium arsinide; (12) Influence of growth temperature; and (13) Nonlinear optic in situ diagnostic of crystalline film.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 24, 1991
- Accession Number
- ADA240913
Entities
Organizations
- Tampere University of Technology