Development of a Shadow Mask for Sputtering Platinum onto Ferroelectric- Coated Substrates.
Abstract
The Army has a continuing requirement for nonvolatile memories in which critical information placed in system memory is available after the system is reactivated following storage or power down. To meet the needs of future increases in memory size and a requirement for nonvolatile random access memory devices, ferroelectric thin film material research and development has become a priority. Ferroelectric nonvolatile memories combine the advantages of CMOS circuitry, small size, and low power with the ability to retain information in a power-off condition over long periods of time (years). In support of the ferroelectric memory program, a project was undertaken to make a shadow mask for sputter-depositing platinum electrodes with microfabrication techniques to create very small shaped openings through a silicon wafer. The mask is designed so that electrode material such as platinum sputtered through the mask onto a ferroelectric thin film substrate creates small well-defined capacitors that can then be used for extensive ferroelectric material research.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1991
- Accession Number
- ADA241974
Entities
People
- Bernard J. Rod
- Judith T. Mccullen
- Robert Reams
Organizations
- Harry Diamond Laboratories