Room-Temperature Carrier Lifetimes and Optical Nonlinearities of GaInAs/A11nAs and GaA11nAs/A11nAs MQW Devices at 1.3 micrometers

Abstract

The room-temperature nonlinear absorption spectra of a GaInAs/AlInAs and a GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 microns using a pump probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2 x 10 to the 18th power and 1.0 x 10 to the 18th power /cc with carrier lifetimes of approximately 2.3 ns and approximately 750 ps for the two samples, respectively. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy (MBE) with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical switching devices. A 175 ps recovery time was measured for the etalon at room temperature.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1991
Accession Number
ADA242837

Entities

People

  • John L. Stacy
  • Mark F. Krol
  • Raymond K. Boncek
  • Steven T. Johns

Organizations

  • Rome Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Bulk Materials
  • Communication Systems
  • Diffraction
  • Dye Lasers
  • Lasers
  • Liquid Dye Lasers
  • Optical Properties
  • Optical Switching
  • Optics
  • Picosecond Time
  • Quantum Wells
  • Refractive Index
  • Semiconductors
  • Spectra
  • Switching

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing