Fabrication of an Insulated Gate Diamond FET for High Temperature Applications
Abstract
A type IIa natural diamond was implanted with boron to form a p-type channel layer. This layer was then used to fabricate an insulated gate field effect transistor. This is the first reported use of ion implantation to successfully fabricate a field effect device in diamond. Testing was carried out from room temperature to 550 K. Both saturation and pinch-off were observed at room temperature, with a measured transconductance of 6.9 micron S/mm. Device failures at elevated temperatures were attributed to gate current leakage through the SiO2, insulator layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 17, 1991
- Accession Number
- ADA251042
Entities
People
- Carl R. Zeisse
- Charles A. Hewett
- James R. Zeidler
- Richard Nguyen