Reliability of Schottky and Ohmic Metallization in GaAs
Abstract
A study was undertaken on the reproducibility and reliability of AuGeNi ohmic contact (with a barrier layer of Ag) to n-GaAs using a limited number of as available samples The study showed that there is a large spread in the value of specific contact resistance among the samples and even within each chip or wafer which means that the reproducibility is poor. The contact resistance degrades (increasing by a factor of up to 5) beyond a temperature of 300 deg C-350 deg C even for relatively short durations of aging. There is also a significant variation in the aging behavior of different contacts on the chip. Under an electrical stress, the large area contacts are stable at 200 deg C while the small area contacts show significant degradation in specific contact resistance after about 10 hours of aging. The studies carried out of the reliability of Ti/Pt/Au Schottky contacts on n-GaAs showed that the saturation currents increase by 4 to 5 orders of magnitude beyond a temperature of 300 deg C-350 deg C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1991
- Accession Number
- ADA251473
Entities
People
- A. N. Saxena
- K. Ramkumar
Organizations
- University of Dayton