Quantum 1/f Noise in High Technology Applications Including Ultrasmall Structures and Devices
Abstract
The practical application of the quantum 1/f effect to quartz resonators and to infrared detectors present in this report allows us for the first time to understand and to extend the stability limits of quartz resonators. It also explains 1/f noise in most semiconductor devices and in infrared detectors considered in this report in the presence of radiation, although 1/f noise has been already successfully pushed below background in PtSi on p-type Si Schottky diodes at RADC-Hanscomb. A fundamental breakthrough was performed through the first direct derivation of the coherent quantum 1/f effect from a special quantum-electrodynamic propagator, and from the author's general sufficient 1/f chaos criterion presented in the previous yearly report. Finally, the quantum 1/f cross-correlations derived by the author have been used to recalculate and to graph the quantum 1/f mobility fluctuations in Si and gallium arsenide samples as a function of temperature and doping, in good agreement with the measurements of Tacano in Japan and Hooge in the Netherlands.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 14, 1992
- Accession Number
- ADA253922
Entities
People
- Peter H. Handel