Development of Model Based Magnetic LP-LEC Growth of Large Diameter GaAs

Abstract

The objective of this research was to explore the range of analytical information on the defect structure of doped and semi-insulating GaAs obtainable from computational, non-invasive, near infrared absorption analysis. Motivation for this research was provided by the realization that the establishment of meaningful property specifications for device materials is contingent on noninvasive defect analysis executable in a fabline environment. Infrared absorption measurements on a micro- and macro-scale in combination with computational image processing and analysis were found to meet the requirements of the stated research objectives.

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Document Details

Document Type
Technical Report
Publication Date
Jun 14, 1992
Accession Number
ADA262361

Entities

People

  • August F. Witt

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Correlation Analysis
  • Crystal Growth
  • Data Storage Systems
  • Defect Analysis
  • Digital Data
  • Digital Images
  • Electron Microscopy
  • Engineering
  • Fluid Dynamics
  • Image Processing
  • Materials
  • Materials Science
  • Measurement
  • Microscopy
  • Semiconductors
  • Standards

Readers

  • Computational Fluid Dynamics (CFD)
  • Semiconductor Device Technology
  • Software Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems