Bonded Silicon-on-Sapphire Wafers and Devices

Abstract

Silicon-on-sapphire (SOS) has been prepared by direct wafer bonding. The silicon layer was thinned to about 10 micrometers mechanical grinding and chemical etching. P-N junction diodes were fabricated in the bonded SOS and compared with epitaxially grown SOS. The reverse bias leakage current was almost 15 x less in the bonded SOS. A generation lifetime of 10 microseconds can be estimated from the junction leakage. The effects of processing temperatures on the bonded SOS were also studied. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 15, 1992
Accession Number
ADA265892

Entities

People

  • G. A. Garcia
  • G. P. Imthurn
  • H. W. Walker
  • L. Forbes

Organizations

  • Naval Command, Control and Ocean Surveillance Center

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Chemical Etching
  • Chemical Vapor Deposition
  • Complementary Metal-Oxide Semiconductors
  • Diodes
  • Electron Microscopy
  • Field Effect Transistors
  • Films
  • High Temperature
  • Materials
  • Metal Oxide Semiconductors
  • Ocean Surveillance
  • P-N Junction Diodes
  • P-N Junctions
  • Sapphire
  • Scanning Electron Microscopy
  • Semiconductors

Readers

  • Semiconductor Device Technology
  • Surface Coatings Technology.