Field Emitter Array RF Amplifier Development Project Phase One, Cathode Technology Technology Development
Abstract
Process in research and development continues at all sites. MCNC's program continues at full speed with smooth transition of project personnel. Electrical testing of field emitter arrays fabricated at MCNC continues at all sites. Effects of anode proximity on emission current capture are being investigated. Two new processes for gate opening alignment are under development. Both eliminate the necessity of retaining the nitride caps on the field emitter tips through the entire processing sequence. One requires alignment during an additional photolithography step, the other is self- aligning. Refinements in processing continue. Better control of the anisotropic silicon etch for tip formation has been achieved. In-house chem-mechanical polishing is still under investigation as a method for wafer planarization. Other materials are being evaluated for use as the insulating layer between substrate and gate. Better methods for depositing evaporated oxides are being sought, and the oxides as deposited are being characterized. Vacuum bonder and test system is operational. The bonding chamber has been outfitted for DC testing to improve test throughput, with electrical feedthroughs rated for 700 V at 10 A. Failure analysis of field emitter arrays from two lots was completed. Five mechanisms in two classes were identified as contributors to device failures: those mechanisms that destroyed working emitters, and those that prevented emitters from working. In anticipation of continued ARPA funding for the field emitter amplifier project, revised budgetary and scheduling information was prepared. Design of the process and reticle set for the next generation of devices was begun
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1993
- Accession Number
- ADA266346
Entities
People
- Bertram Hui