Low Temperature Deposition and Characterization of N- and P-Type Silicon Carbide Thin Films and Associated Ohmic and Schottky Contacts

Abstract

Monocrystalline films of SiC were grown on alpha (6H)-SiC(0001) wafers using disilane (Si2H6) and ethylene (C2H4) by gas-source MBE at 1050 deg C. The nucleation and growth of cubic beta-SiC(111) on the surface terraces of the hexagonal 6H-SiC rather than on the step surfaces and the resultant formation of double positioning boundaries is discussed. The reconfiguration of the growth system leading to enhanced control over polytype deposition is also described. Thin film contacts of Ti, Pt, Hf, and Co were deposited in UHV onto unheated, n-type vicinal alpha(6H)-SiC(0001) films by electron beam evaporation. All as-deposited contacts were rectifying with low ideality factors (n<l.l), low leakage currents and Schottky barrier heights between 0.85 eV and 1.15 eV. The lowest leakage currents were <5xl0-8 A/CM2 at-10V. Titanium and Pt remained relatively stable after annealing at 700-750 deg C; whereas, Co became ohmic after annealing for two minutes at 1000 deg C. UV photoemission studies on both SiC/metal interfaces and the surface of AlN(0001) deposited on SiC have been initiated. A major emphasis is on surface cleanliness prior to metal deposition. A spectral feature observed in the AlN is attributed to the initial indication of negative electron affinity in this material. Chemical interdiffusion between alpha (6H)-SiC wafers and epitaxially deposited 2H-AlN films are under investigation within the temperature range of 1500 deg C to 1700 deg C. SiC, AlN, Gas source molecular beam epitaxy, Transmission electron microscopy, Metal contacts, Ti, Pt, Hf, Co, Ideality factors, Leakage currents, Schottky barrier heights, UV Photoemission, Negative electron affinity, Chemical interdiffusion

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1993
Accession Number
ADA267966

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemistry
  • Crystal Structure
  • Crystals
  • Electron Energy
  • Electron Microscopy
  • Energy Bands
  • Fermi Levels
  • Materials
  • Materials Science
  • Measurement
  • Metal-Semiconductor Junctions
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Physics
  • Surface Properties

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene