Dephasing Processes in III-V Semiconductors

Abstract

Our study has dealt with both experimental and theoretical studies of electronic 'dephasing' processes in a variety of model semiconductor systems, all based upon III-V materials and heterostructures. Attention has been primarily given to dephasing processes in excitonic systems, however, free- carrier dynamics have not been ignored. We have studied the following model systems: exciton-polaritons in GaAs, 3D bulk excitons in GaAs, quasi-2D interface excitons in GaAs/AlxGa1-xAs heterostructures, excitons and free- carriers in ordered InxGa1-xP. Experimental techniques utilized include: photoluminescence (PL), PL-excitation, PL decay kinetics, time-resolved PL- excitation, resonant Raman scattering, time-resolved spectroscopics, resonant Brillouin scattering, and all optical carrier transport measurements.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1993
Accession Number
ADA271677

Entities

People

  • Guy D. Gilliland

Organizations

  • Emory University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Birds
  • Crystal Lattice Vibrations
  • Diffraction
  • Dye Lasers
  • Energy Bands
  • Energy Gaps
  • Epitaxial Growth
  • Laser Beams
  • Optical Properties
  • Polaritons
  • Quantum Wells
  • Repetition Rate
  • Semiconductors
  • Transport Properties
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics