Modeling Electromagnetic Effects in MMICs for T/R Modules

Abstract

This report documents an investigation of circuit modeling of electromagnetic environment effects (E3) in the microwave monolithic integrated circuits contained in T/R models. The work was performed at Rome Laboratory under an Expert Science and Engineering contract with Calspan/University of Buffalo Research Center. Topics include multi-port vector characterizations, data acquisition, CAD testing and validations of models for selected MMICs (and models), and recommendations and plans for further assessments of E3 in advanced MMICs, T/R modules and multi-chip (MCM) nodules. An extensive bibliography on contemporary MMIC design and GaAsFET modeling is also included.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1993
Accession Number
ADA273808

Entities

People

  • Daniel J. Kenneally

Organizations

  • Calspan-University of Buffalo Research Center

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Circuit Analysis
  • Computational Science
  • Computer Programming
  • Electromagnetic Fields
  • Electromagnetic Properties
  • Electromagnetic Radiation
  • Electronics Industry
  • Electronics Laboratories
  • Field Effect Transistors
  • Geography
  • Integrated Circuits
  • Logic Gates
  • Modules (Electronics)
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Readers

  • Academic Conference Management
  • Aerospace Test and Evaluation
  • Integrated Circuit Design and Technology.