MOCVD Growth of GAN, AlN and AlGaN for UV Photodetector Applications

Abstract

For the growth of III-V nitrides, three main problems hinder the production of device quality materials. They are large lattice mismatch between nitride films and substrates, high n-type background concentration and difficulty in p-type doping. In the past year, we focused on the first problem, the lattice mismatch. Different substrates and different orientations of the substrates have been used in order to find a suitable substrate for the nitride growth. An atmospheric horizontal-type metalorganic chemical vapor deposition (MOCVD) reactor was used for the growth of aluminum nitride gallium nitride and ternary AlGa(1-x)N

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1993
Accession Number
ADA275078

Entities

People

  • Manijeh Razeghi

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electrons
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Crystal Structure
  • Crystallography
  • Crystals
  • Diffraction
  • Electron Mobility
  • Materials
  • Optical Properties
  • Scattering
  • Semiconductors
  • Silicon Carbide
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene