Electron-Bombarded Semiconductor Amplifier for High-Power, High- Frequency Output

Abstract

This paper describes a high-powered radio-frequency amplifier being developed for communications jamming and other applications in the HF band. It is intended to put out 10- 100 kW over the 2-30 MHz band without tuning or filters. Its principle of operation is based on the current flowing through reverse-biased diodes due to the creation of electron-hole pairs by high-energy electrons passing through the junction regions. A set of 100 - 1000 diodes are combined in an array to make an amplifier with 10 - 100 kW of output power. This amplifier has the advantages of high power, small size, high gain, and high linearity. Communications Countermeasures.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1993
Accession Number
ADA277554

Entities

People

  • D. W. Brock

Organizations

  • Naval Command, Control and Ocean Surveillance Center

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Circuit Boards
  • Circuits
  • Diodes
  • Electron Beams
  • Electron Holes
  • Energy
  • Frequency
  • High Energy
  • High Gain
  • Ocean Surveillance
  • P-N Junctions
  • Printed Circuits
  • Radio Frequency
  • Radio Frequency Amplifiers
  • Semiconductors
  • Surveillance

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Radar Systems Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics