The Junction Characteristics and Current Conduction Mechanisms of GaInP2 n+p Diodes and Solar Cells.
Abstract
This work involves an investigation of GaInP2 n+p diode and solar cell dark current mechanisms, the defect centers that affect these mechanisms, and the response of dark current and solar cell photovoltaic parameters to I MeV electron irradiation and thermal annealing. Dark current due to carrier diffusion, recombination, and tunneling were identified, and recombination current was found to dominate at the maximum power-point voltage of the GaInP2 solar cells. Carrier recombination was found to occur via defect centers at the perimeter and within the bulk of the junction. Two deep majority-hole trap centers were found at Ea1 = Et - Ev approx. 0.45eV and Ea2 = Et- Ev approx. 0.05eV. Dark current due to carrier tunneling was dominant in 'leaky' diodes and solar cells that contained line- like morphological defects believed to be due to lattice mismatch between GaInP2 and GaAs. The effects of 1 MeV electron irradiation and thermal annealing on solar cell and diode dark current mechanisms and efficiency were also studied. (jg)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1994
- Accession Number
- ADA290857
Entities
People
- Kitt C. Reinhardt
Organizations
- Air Force Institute of Technology