Opto-Electronic Components from Non-Stoichiometric III-V Materials.
Abstract
An investigation was undertaken to determine the feasibility of integrating low temperature growth GaAs:As and silicon for the development of optoelectronic devices. These devices attempt to exploit the optoelectronic properties of LT GaAs while integrating the structure on silicon substrates. Numerical models of LT GaAs are developed and implemented to aid in the design of such devices. An integrated MSM-LED structure was successfully fabricated on a silicon substrate. The results of the study show that it is feasible to integrate LT GaAs devices and silicon technology. Further development of the design software and a variety of structures, including a high voltage switch, a transceiver and a GHz tunable filter are proposed for a Phase II effort. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1995
- Accession Number
- ADA293206
Entities
People
- H. L. Grubin
- J. P. Kreskovsky