WOCSDICE '95 Workshop On Compound Semiconductor Devices And Intergrated Circuits (19th) Held in Stockholm, Sweden on May 21 - 24, 1995.

Abstract

Partial contents: Properties and Applications of GaN Films; Carbon Doping of InGaAs for InP-Based HBTs using Liquid CCl4 Source; GaAs MOVPE Overgrowth of nm-sized Tungsten Wires; MOCVD for HBT and HEMT Technology; Semiconductor Technologies; Limitation in concentration and mobility for Si delta-doping and Si monolayers in GaAs; Modification of InGaAs/InAlAs Hetero-Barriers by Delta Doping; New Electronic Materials: Low Temperature Grown GaAs and InP. jg p. 2

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Document Details

Document Type
Technical Report
Publication Date
May 24, 1995
Accession Number
ADA294964

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Electromagnetic Fields
  • Electronics Laboratories
  • Field Effect Transistors
  • Laser Applications
  • Materials Science
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Optical Properties
  • Optoelectronics
  • Power Electronics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene