Atomic Layer Epitaxy of Group 4 Materials: Surface Processes, Thin Films, Devices and Their Characterization.
Abstract
The ALE technique has been employed to deposit monocrystalline 3C-SiC thin films at 860 + or - 10 deg C. Wafers containing heterojunction bipolar transistor structures have been completely processed and characterized. No transistor activity was detected in any of the HBT structures. Electrical characterization of the emitter-base and collector-base junctions revealed rudimentary rectifying behavior, indicating that the base region of the completed HBT structures was too thick for transistor activity. CoSi2 films have been electron beam evaporated onto Si <100> surfaces to study this material as a substrate for diamond deposition. The CoSi2 film was characterized with LEED, ABS depth profiling, quantitative XPS and TEM. Diamond films were subsequently grown upon the CoSi2 surface using Microwave Plasma CVD. SEM was used to evaluate the resulting diamond films in terms of particle morphology and orientation. As-grown CeO2 epitaxial films on Si<100> exhibited poor electrical and structural properties. Post growth oxidation anneals in argon followed or proceeded by oxygen environments improved both properties. However, the anneals in oxygen also resulted in the growth of an SiO2 layer at the silicon interface which reduced the capacitance of the structure. An expression for the optimum oxidation time, tau, was developed as a function of the initial thicknesses of the deposited film. jg p.2
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1995
- Accession Number
- ADA296028
Entities
People
- J. T. Glass
- N. A. El-masry
- P. Goeller
- Robert F Davis
- Sarah S. Bedair
Organizations
- North Carolina State University