Transport Phenomena Studies, VIA Computational Simulation, in Structural Materials Processing.
Abstract
The objective of the present STTR project is to develop computational tools necessary to simulate processing of structural materials. Processes considered are chemical vapor deposition (CVD) and chemical vapor infiltration In the Phase I work discussed in this report, an existing SRA computational fluid dynamics code has been adapted to apply to CVD modeling. Multicomponent diffusion, thermal diffusion, homogeneous and surface reactions and conjugate heat transfer have been included. A model for infiltration of porous preforms has been developed for CVI. The models and code were used to study CVD of silicon carbide, CVD of boron on tungsten wire, and CVI of SiC-SiC preforms. The models were first validate for silicon deposition. In all cases, it was demonstrated that numerical simulation can serve as a design tool by enabling cost-effective parametric study to understand mechanisms and allow optimization. (MM)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 07, 1995
- Accession Number
- ADA297856