Electroluminescing Porous Silicon (ELPS) Device.

Abstract

The main goal of this project was to determine the mechanism of operation of an all silicon, electroluminescing device. The device consists of an n+ silicon "wire" supported on top of a layer of porous silicon. Other aims included the evaluation of the device's light emitting efficiency and it's potential as a silicon-based light source. The device emits light over a broad spectrum, extending from the visible into the infrared, with two dominant peaks, at 1.3 and 2.05 microns. An optical quantum efficiency of better than 6% was determined. The device demonstrated continuous device operation for over 150 hours. The spectral data strongly suggests that blackbody radiation is the dominant emission mechanism in our device. However, there is also evidence of hot electron induced emission. We suspect that hot electrons are injected into the interface with the underlying porous silicon, from which some of the emission originates.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 11, 1995
Accession Number
ADA300332

Entities

People

  • John Penczek
  • Rosemary L. Smith

Organizations

  • University of California

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Blackbody Radiation
  • Chemistry
  • Efficiency
  • Electron Emission
  • Electrons
  • Emission
  • Field Effect Transistors
  • Light Sources
  • Metal Oxide Semiconductors
  • Optical Properties
  • P-N Junctions
  • Quantum Efficiency
  • Radiation
  • Semiconductors
  • Spectra
  • Surface Chemistry

Readers

  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics
  • Quantum Computing