Semiconductor Deposition and Etching Interactions of Laser-Generated Translationally Hot Atoms and Radicals.
Abstract
Laser vaporization of cryogenic films is employed to produce translationally toms and radicals, and these kinetic-energy-enhanced spedes are used for studies of semiconductor etching; the results are important for the basic physics of electronics materials processing. Recent accomplishments include: (1) production of a novel source of kinetic-energy-enhanced beams of Cl(2), Cl, and F atoms by laser vaporization, (2) observation of substantial enhancement of the etching rate and sustained etching of room temperature Si(100) by chlorine molecules with energies greater or less than 3 eV, (3) scattering studies of translationally fast Cl(2) and Cl with Si(100), (4) velocity selection of the translationally fast beams for energy-resolved studies of dry etching processes, and (5) measurements of SiCl(x) product distributions as a function of substrate temperature.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1994
- Accession Number
- ADA302083
Entities
People
- Stephen R. Leone
Organizations
- University of Colorado Boulder