Ion Implantation Processes for Heteroepitaxial Nucleation of Diamond.
Abstract
The objective of this program has been to employ variations of high temperature ion implantation-outdiffusion processing to promote heteroepitaxial nucleation of diamond on a foreign substrate. The program has involved development of ion implantation apparatus with capabilities for processing at very high temperatures and for in-situ CVD diamond growth. Studies have been conducted to examine implantation of carbon ions, sometimes in conjunction with other ions such as hydrogen or fluorine, as a possible means to induce diamond nucleation effects upon a number of materials including copper, nickel, niobium, palladium, cobalt, silicon and germanium. There has been no evidence from these investigations to indicate that implanted carbon can induce heteroepitaxial nucleation of diamond upon any candidate material. jg p.2
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1995
- Accession Number
- ADA302438
Entities
People
- Allen Kirkpatrick