Atomic Layer Epitaxy of Thin Diamond Films.
Abstract
We are attempting to develop an atomic layer epitaxy scheme for the deposition of diamond thin films based on the use of halogenated reagents. To this end, we have been investigating the surface chemistry of diamond and graphite substrates with both fluorine and chlorine atoms. We have discovered, using ultrahigh vacuum surface analysis techniques (x-ray photoelectron spectroscopy (XPS) and low energy electron diffraction), that halogen beam dosing of diamond surfaces indicates that diamond is surprisingly unreactive towards both fluorine and chlorine atoms. Fluorine atoms efficiently adsorb as a carbon-monofluoride moiety at a saturation level of three-quarters of a monolayer at room temperature. The adlayer is ordered on the (111) surface but disordered on the (100) surface. Fluorine desorbs primarily as atomic fluorine over a broad temperature range (500-1200 K), indicating that diamond etching is not a major desorption process. Chlorine atoms bond much more weakly, saturating at a sub-monolayer coverage which is stable to a temperature of only 423 K. These results are ascribed to the severe steric crowding on the diamond surface and the inability of the diamond lattice to deform to accommodate the formation of multiple carbon-halogen bonds. jg p.2
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1995
- Accession Number
- ADA302613
Entities
People
- Andrew Freedman
- David D. Neison Jr.
- Gary N. Robinson
- Mark S. Zahniser
- Paul L. Kebabian