Growth, Characterization and Device Development in Monocrystalline Diamond Films.
Abstract
X-ray photoelectron spectroscopy (XPS) has been conducted on a TiC(111) substrate to understand bias-enhanced nucleation (BEN) of CVD diamond. The data revealed two important results: i) the C:Ti ratio of the substrate decreases after an initial exposure to the biasing procedure, and ii) the C-C bonding signal is consistent with the formation of island-like deposition of an overlayer. The decrease in the C-Ti bonding signal suggests that BEN causes C vacancies to form. This procedure also appears to enhance the surface mobility of species on the surface allowing the rapid formation of carbon islands. Nuclear transmutation of B to Li is also being investigated for donor doping of diamond. Homoepitaxial 10B enriched diamond films have been grown and characterized prior to irradiation using Hall measurements to determine resistivity, mobility and carrier concentration. The irradiation will be performed at Oak Ridge National Laboratory.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1995
- Accession Number
- ADA302964
Entities
People
- Robert F Davis
- Robert J. Nemanich
- Zlatko Sitar
Organizations
- North Carolina State University