Photoluminescence and Electroluminescence of Erbium and Neodymium Implanted Semiconductors.

Abstract

Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and Al(x)Ga(1-x)As (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH4) flow, growth time, and hydrogen presence during growth. jg p10

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1995
Accession Number
ADA303289

Entities

People

  • James R. Hunter

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Band Theory Of Solids
  • Conduction Bands
  • Detectors
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Intensity
  • Low Temperature
  • Luminescence
  • Optical Properties
  • P-N Junctions
  • Semiconductors
  • Silicon Compounds
  • Spectra
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Microelectronics - Graphene