Low Voltage Operational Amplifier using Parasitic Bipolar Transistors in CMOS.

Abstract

In this research, a low voltage BiCMOS operational amplifier was built using parasitic bipolar transistors in bulk CMOS technology. Designed and analyzed using PSPICE circuit simulation software, the amplifier achieves a gain bandwidth product of 20.24 MHz with power supply voltages of +/- 2.5 V. The simulation proved that the BiCMOS amplifier will operate with power supplies as low as +/- 0.6 V. Using MAGIC VLSI software, a layout of the amplifier was made for eventual fabrication in the MOSIS 2.0 m CMOS process.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1995
Accession Number
ADA303882

Entities

People

  • Jaime P. Chunda

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Bipolar Junction Transistors
  • Closed Loop Systems
  • Fabrication
  • Field Effect Transistors
  • Integrated Circuits
  • Low Voltage
  • Operational Amplifiers
  • Power Electronics
  • Power Supplies
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Transistor Amplifiers
  • Transistors
  • Very Large Scale Integration

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.