The Deposition of Electro-Optic Films on Semiconductors.

Abstract

Highly epitaxial, dense, and reproducible KNbO3 thin films were produced using a unique ion beam deposition method and characterized using x-ray diffraction, Rutherford backscattering spectroscopy, atomic force microscopy, transmission electron microscopy, prism coupling, and optical loss measurements. Second harmonic generation (SHG) was demonstrated for these thin films where infrared light was doubled in frequency to green by phase-matching in a KNbO3 thin planer waveguide. The current obstacle limiting the development of KNbO3 thin film waveguides is high optical losses. In this study optical losses in these KNbO3 thin films were correlated with different film microstructures to determine the dominant loss mechanisms. It has been shown that volume absorption, interface scattering, and domain boundary scattering all contribute to the high optical losses measured. The KNbO3 thin films were also integrated with Si, GaAs, and Al2O3 substrates using an MgO buffer layer. jg p1

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1996
Accession Number
ADA304328

Entities

People

  • Alice F. Chow
  • Angus I. Kingon
  • Klaus J. Bachmann
  • Orlando H. Auciello

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Crystal Structure
  • Crystals
  • Diffraction
  • Laser Beams
  • Laser Diodes
  • Materials
  • Materials Processing
  • Materials Science
  • Measurement
  • Optical Properties
  • Optics
  • Piezoceramics
  • Scattering
  • Semiconductors
  • X-Ray Diffraction

Fields of Study

  • Materials science
  • Physics

Readers

  • Optical Physics and Photonics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene