Analysis and Characterization of GaN Based Materials and Devices.
Abstract
We calculated the elastic strain relaxation in wurtzite GaN-AlN-GaN semiconductor-insulator-semiconductor (SIS structures, Elastic strain tensor components, elastic energy, the density of the misfit dislocations, and the other parameters of the system were obtained as functions of the AlN layer thickness). Theoretical values of the elastic strain relaxation are in satisfactory agreement with experimental data extracted from capacitance voltage characteristics of GaN-AlN-GaN SIS structures. p2
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1995
- Accession Number
- ADA306636
Entities
People
- John M. Money
- Michael Shur
Organizations
- University of Virginia