High Critical Temperature Superconductor Substrate and Buffer Layer Compounds, A2MeSbO6 (Where A=Ba and Sr; and Me=Sc, In and Ga).

Abstract

Compounds in the series A2MeSbO6, where A=Ba, Sr, and Me=Sc, In, and Ga, have been used as substrate buffer layers with YBa2Cu3O7-x thin films. These materials were prepared by solid-state reaction of the oxides and carbonates. The compounds are ordered perovskites except for Ba2InSbO6. All compounds are cubic except Sr2ScSbO6 and Sr2GaSbO6 which are pseudo-cubic, tetragonal. Dielectric constant and loss tangent are reported for each bulk compound. Herein is described the successful deposition of thin films A2MeSbO6 on (100) MgO and A2MeSbO6/(001) YBCO/(100) MgO by pulsed laser ablation.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1996
Accession Number
ADA311130

Entities

People

  • Arthur Tauber
  • Robert D. Finnegan
  • Steven C. Tidrow
  • William D. Wilber

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Critical Temperature
  • Dielectric Permittivity
  • Dielectric Properties
  • Diffraction
  • Films
  • Information Processing
  • Materials
  • Measurement
  • Microwave Equipment
  • Military Research
  • Perovskites
  • Phase Transformations
  • Pulsed Lasers
  • Substrates
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Superconducting Magnet Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition