AlGaN Channel Transistors for Power Management and Distribution.

Abstract

This report summarizes the first month on the SBIR Phase I program to develop AlGaN Channel JFETs. A mask set to fabricate nitride based JFETs was begun. IV curves of GaN PN junctions are shown. Measurements of the leakage of these junctions indicate that recessing the P layer routinely will require an etch stop to minimize the leakage current. Ni Au P type ohmics did not withstand 500 C anneals.

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Document Details

Document Type
Technical Report
Publication Date
Jun 05, 1996
Accession Number
ADA312620

Entities

People

  • James Van Hove

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electronic Equipment
  • Electronics
  • Measurement
  • P-N Junctions
  • Semiconductor Devices
  • Solid State Electronics
  • Transistors

Readers

  • Semiconductor Device Technology